Plasma production of nanocrystalline silicon particles and polymorphous
silicon thin films for large-area electronic devices*
Pere Roca i Cabarrocas, Anna Fontcuberta i Morral, Sarra Lebib, and
Yves Poissant
Laboratoire de Physique des Interfaces et des Couches
Minces (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex,
France
Abstract: Powder formation in silane plasmas has been considered
as a technology drawback because it might lead to the formation of macroscopic
defects in the deposited layers. Here we summarize our recent efforts
in controlling the formation of powder precursors, in particular, nanocrystalline
silicon particles, aiming at their incorporation in the films. Indeed,
the incorporation of clusters and crystallites along with SiHx radicals
allows production of polymorphous silicon films with improved structure
and transport properties with respect to standard amorphous silicon
films.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317492.
** Corresponding author.
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