Ion-induced damage and annealing of silicon. Molecular dynamics simulations*
David Humbird and David B. Graves
University of California at Berkeley, Berkeley, CA
94720, USA
Abstract: A study of the interactions of energetic argon ions
with silicon surfaces using molecular dynamics simulations is reported.
A dynamic balance between ion-induced damage and recrystallization of
the surface is detected. By manipulating ion energy, argon ions are
able to both create disordered regions near the surface, and recrystallize
these disordered regions.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317492.
** Corresponding author.
Page last modified 19 April 2002.
Copyright © 2002 International Union of Pure and Applied Chemistry.
Questions or comments about IUPAC, please contact, the Secretariat.
Questions regarding the website, please contact web
manager.